SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Technical documents
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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€ 6.714
Each (In a Pack of 2) (ex VAT)
Standard
2
€ 6.714
Each (In a Pack of 2) (ex VAT)
Standard
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products