Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Height
1.1mm
PRICED TO CLEAR
Yes
Stock information temporarily unavailable.
Please check again later.
P.O.A.
25
P.O.A.
25
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Height
1.1mm
PRICED TO CLEAR
Yes