Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Country of Origin
Philippines
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Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Country of Origin
Philippines