Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Width
6.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Stock information temporarily unavailable.
Please check again later.
P.O.A.
2
P.O.A.
2
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Width
6.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm