Nexperia N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN1R2-30YLC,115
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11.09
€ 2.218 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 11.09
€ 2.218 Each (In a Pack of 5) (ex VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | € 2.218 | € 11.09 |
| 50 - 120 | € 2.077 | € 10.38 |
| 125 - 245 | € 1.982 | € 9.91 |
| 250 - 495 | € 1.841 | € 9.20 |
| 500+ | € 1.723 | € 8.61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products