Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Width
4.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Height
15.65mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1.864
Each (In a Tube of 50) (ex VAT)
50
€ 1.864
Each (In a Tube of 50) (ex VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 1.864 | € 93.22 |
100 - 200 | € 1.723 | € 86.14 |
250+ | € 1.652 | € 82.60 |
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Width
4.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Height
15.65mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.