N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

RS Stock No.: 826-8245PBrand: InfineonManufacturers Part No.: BSS126H6327XTSA2
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Width

1.3mm

Transistor Material

Si

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Width

1.3mm

Transistor Material

Si

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in