Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
5.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0.956
Each (On a Reel of 5000) (ex VAT)
5000
€ 0.956
Each (On a Reel of 5000) (ex VAT)
5000
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
5.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.