Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
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P.O.A.
Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
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Production pack (Tray)
1
P.O.A.
Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series