MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

  • Where are MOSFETs used?


    MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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    Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Series Typical Turn-Off Delay Time Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
    NTR5103NT1G N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 260 mA 60 V 3 Ω 2.6V 1.9V ±30 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 26.7 pF @ 25 V 0.81 nC @ 5 V 3.04 x 1.4 x 1.01mm - 4.8 ns 1.7 ns 530S 1.4mm 1.01mm 3.04mm 1.2V - +150 °C 1 -55 °C - -
    FDD86250-F085 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK ON Semiconductor ON Semiconductor N 50 A 150 V 22 mΩ 4V 2V ±20 V TO-252 Surface Mount 3 Single Enhancement Power MOSFET 160 W 1900 pF @ 75 V 28 nC @ 10 V 6.73 x 6.22 x 2.39mm - 23 ns 14 ns - 6.22mm 2.39mm 6.73mm 1.25V - +175 °C 1 -55 °C - -
    NTZD3154NT1G Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 ON Semiconductor ON Semiconductor N 540 mA 20 V 900 mΩ 1V 0.45V ±7 V SOT-563 Surface Mount 6 - Enhancement Small Signal 250 mW 80 pF @ 16 V 1.5 nC @ 4.5 V 1.7 x 1.3 x 0.6mm - 16 ns 6 ns 1s 1.3mm 0.6mm 1.7mm 1.2V - +150 °C 2 -55 °C - -
    NTE4153NT1G N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 ON Semiconductor ON Semiconductor N 915 mA 20 V 950 mΩ 1.1V 0.45V ±6 V SC-89 Surface Mount 3 Single Enhancement Small Signal 300 mW 110 pF @ 16 V 1.82 nC @ 4.5 V 1.7 x 0.95 x 0.8mm - 25 ns 3.7 ns 1.4s 0.95mm 0.8mm 1.7mm 1.1V - +150 °C 1 -55 °C - AEC-Q101
    NTR3C21NZT1G N-Channel MOSFET, 3.6 A, 20 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 3.6 A 20 V 55 mΩ 1V 0.45V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 470 mW 1540 pF @ 16 V 17.8 nC @ 4.5 V 3.04 x 1.4 x 1.01mm - 420 ns 7 ns 20s 1.4mm 1.01mm 3.04mm 1V - +150 °C 1 -55 °C - -
    NTR4170NT1G N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 2.4 A 30 V 110 mΩ 1.4V 0.6V ±12 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 480 mW 432 pF @ 15 V 4.76 nC @ 4.5 V 3.04 x 1.4 x 1.01mm - 15.1 ns 6.4 ns 8s 1.4mm 1.01mm 3.04mm 1V - +150 °C 1 -55 °C - -
    NVR5198NLT1G N-Channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 ON Semiconductor ON Semiconductor N 2.2 A 60 V 205 mΩ 2.5V 1.5V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.5 W 182 pF @ 25 V 5.1 nC @ 10 V 3.04 x 1.4 x 1.01mm - 13 ns 5 ns 3s 1.4mm 1.01mm 3.04mm 1.2V - +150 °C 1 -55 °C - AEC-Q101
    NTJD4401NT1G Dual N-Channel MOSFET, 910 mA, 20 V, 6-Pin SC-88 ON Semiconductor ON Semiconductor N 910 mA 20 V 440 mΩ 1.5V 0.6V ±12 V SC-88 Surface Mount 6 - Enhancement Small Signal 550 mW 33 pF @ 20 V 1.3 nC @ 4.5 V 2.2 x 1.35 x 1mm - 0.78 ns 0.08 ns 2s 1.35mm 1mm 2.2mm 1.1V - +150 °C 2 -55 °C - AEC-Q101
    NVMFS6H801NT1G N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN ON Semiconductor ON Semiconductor N 157 A 80 V 2.8 mΩ 4V 2V ±20 V DFN Surface Mount 5 Single Enhancement Power MOSFET 166 W 4120 pF @ 40 V 64 nC @ 10 V 5.1 x 6.1 x 1.05mm - 70 ns 25 ns 128S 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
    FDMC010N08C N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 ON Semiconductor ON Semiconductor N 51 A 80 V 10 mΩ 4V 2V ±20 V Power33 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1070 pF @ 40 V 15 nC @ 10 V 3.4 x 3.4 x 0.75mm - 17 ns 9 ns 35s 3.4mm 0.75mm 3.4mm 1.3V - +150 °C 1 -55 °C - -
    FDMS4D0N12C N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN ON Semiconductor ON Semiconductor N 67 A 120 V 4 mΩ 4V 2V ±20 V PQFN Surface Mount 8 Single Enhancement Power MOSFET 106 W 4565 pF @ 60 V 36 nC @ 6 V 5 x 6 x 1.05mm - 45 ns 25 ns 144s 6mm 1.05mm 5mm 1.3V - +150 °C 1 -55 °C - -
    MMBFJ175 P-Channel MOSFET, 3-Pin SOT-23 ON Semiconductor ON Semiconductor P - - 125 Ω - - 30 V SOT-23 Surface Mount 3 Single - Analogue Switching 225 mW - - 2.92 x 1.3 x 0.93mm - - - - 1.3mm 0.93mm 2.92mm - - +150 °C 1 -55 °C - -
    NTMFS08N003C N-Channel MOSFET, 147 A, 80 V, 8-Pin Power 56 ON Semiconductor ON Semiconductor N 147 A 80 V 3.1 mΩ 4V 2V ±20 V Power 56 Surface Mount 8 Single Enhancement Power MOSFET 125 W 3820 pF @ 40 V 52 nC @ 10 V 5 x 6 x 1.05mm - 40 ns 20 ns 123s 6mm 1.05mm 5mm 1.3V - +150 °C 1 -55 °C - -
    FDWS9510L-F085 P-Channel MOSFET, 50 A, 40 V, 8-Pin Power56 ON Semiconductor ON Semiconductor P 50 A 40 V 13.5 mΩ 3V 1V ±16 V Power56 Surface Mount 8 Single Enhancement Power MOSFET 75 W 2320 pF @ -20 V 28 nC @ 10 V 5.1 x 5.9 x 1.1mm - 110 ns 10 ns - 5.9mm 1.1mm 5.1mm 1.25V - +175 °C 1 -55 °C - -
    FDMC007N08LCDC N-Channel MOSFET, 22 A, 80 V, 8-Pin PQFN ON Semiconductor ON Semiconductor N 22 A 80 V 6.8 mΩ 2.5V 1V ±20 V PQFN Surface Mount 8 Single Enhancement Power MOSFET 57 W 2195 pF @ 40 V 31 nC @ 10 V 3.4 x 3.4 x 0.75mm - 36 ns 11 ns 80s 3.4mm 0.75mm 3.4mm 1.3V - +150 °C 1 -55 °C - -
    FDWS9509L-F085 P-Channel MOSFET, 65 A, 40 V, 8-Pin Power56 ON Semiconductor ON Semiconductor P 65 A 40 V 8 mΩ 3V 1V ±16 V Power56 Surface Mount 8 Single Enhancement Power MOSFET 107 W 3360 pF @ -20 V 48 nC @ 10 V 5.1 x 5.9 x 1.1mm - 198 ns 10 ns - 5.9mm 1.1mm 5.1mm 1.25V - +175 °C 1 -55 °C - -
    FCD360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V TO-252 Surface Mount 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.73 x 6.22 x 2.39mm - 34 ns 12 ns 6s 6.22mm 2.39mm 6.73mm 1.2V - +150 °C 1 -55 °C - -
    NTD5C434NT4G N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK ON Semiconductor ON Semiconductor N 160 A 40 V 2.1 mΩ 4V 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 120 W 5400 pF @ 25 V 80.6 nC @ 10 V 6.73 x 6.22 x 2.25mm - 43 ns 15 ns 155s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
    NTD5C648NLT4G N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK ON Semiconductor ON Semiconductor N 91 A 60 V 4.1 mΩ 2.1V 1.2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 76 W 2900 pF @ 30 V 17 nC @ 4.5 6.73 x 6.22 x 2.25mm - 47 ns 21 ns 120s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
    NVD5C454NLT4G N-Channel MOSFET, 88 A, 40 V, 4-Pin DPAK ON Semiconductor ON Semiconductor N 88 A 40 V 3.9 mΩ 2.2V 1.2V ±20 V DPAK Surface Mount 4 Single Enhancement Power MOSFET 56 W 2600 pF @ 25 V 21 nC @ 4.5 V 6.73 x 6.22 x 2.25mm - 33 ns 10 ns 106s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
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