Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Production pack (Reel)
20
P.O.A.
Production pack (Reel)
20
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details