Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 6 x 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Height
0.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAIR 6 x 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Width
6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Height
0.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V