Technical documents
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V
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£ 2.71
Each (In a Pack of 5) (ex VAT)
Standard
5
£ 2.71
Each (In a Pack of 5) (ex VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | £ 2.71 | £ 13.55 |
10 - 95 | £ 2.34 | £ 11.70 |
100 - 495 | £ 1.86 | £ 9.30 |
500 - 995 | £ 1.59 | £ 7.95 |
1000+ | £ 1.35 | £ 6.75 |
Technical documents
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V