Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Series
MDmesh II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.1mm
Height
2.4mm
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Stock information temporarily unavailable.
€ 21.59
€ 4.319 Each (Supplied as a Tape) (ex VAT)
Standard
5
€ 21.59
€ 4.319 Each (Supplied as a Tape) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 45 | € 4.319 | € 21.59 |
| 50 - 120 | € 3.80 | € 19.00 |
| 125+ | € 3.009 | € 15.04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Series
MDmesh II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.1mm
Height
2.4mm
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
