Technical documents
Specifications
Typical Fall Time
6µs
Typical Rise Time
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
Miniature Array
Dimensions
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Minimum Wavelength Detected
450nm
Spectral Range of Sensitivity
450 → 1100 nm
Length
2.2mm
Width
2mm
Linearity
High
Series
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Saturation Voltage
150mV
Height
3.45mm
Country of Origin
China
Product details
Phototransistor Miniature Package
Phototransistors, OSRAM Opto Semiconductors
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P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Typical Fall Time
6µs
Typical Rise Time
6µs
Number of Channels
1
Maximum Light Current
>400µA
Maximum Dark Current
1 (≤ 50)nA
Angle of Half Sensitivity
±18 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
Miniature Array
Dimensions
2.2 x 2 x 3.45mm
Collector Current
50mA
Maximum Wavelength Detected
1100nm
Minimum Wavelength Detected
450nm
Spectral Range of Sensitivity
450 → 1100 nm
Length
2.2mm
Width
2mm
Linearity
High
Series
BPX 81
Emitter Collector Voltage
7V
Collector Emitter Voltage
35V
Saturation Voltage
150mV
Height
3.45mm
Country of Origin
China
Product details