Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
Stock information temporarily unavailable.
Please check again later.
P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm