N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB Vishay SUP70040E-GE3

RS Stock No.: 124-2249Brand: VishayManufacturers Part No.: SUP70040E-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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£ 3.12

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB Vishay SUP70040E-GE3
Select packaging type

£ 3.12

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB Vishay SUP70040E-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45£ 3.12£ 15.60
50 - 120£ 2.34£ 11.70
125 - 245£ 2.17£ 10.85
250 - 495£ 1.95£ 9.75
500+£ 1.82£ 9.10

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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor