N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L

RS Stock No.: 787-7633Brand: PanasonicManufacturers Part No.: SK8403190L
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

HSSO8-F1-B

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+85 °C

Length

3.05mm

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Height

0.95mm

Series

SK

Minimum Operating Temperature

-40 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L

P.O.A.

N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

HSSO8-F1-B

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+85 °C

Length

3.05mm

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Height

0.95mm

Series

SK

Minimum Operating Temperature

-40 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more