Infineon IRG4PC40WPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

RS Stock No.: 124-8977Brand: InfineonManufacturers Part No.: IRG4PC40WPBF
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Technical documents

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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P.O.A.

Infineon IRG4PC40WPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole

P.O.A.

Infineon IRG4PC40WPBF IGBT, 40 A 600 V, 3-Pin TO-247AC, Through Hole
Stock information temporarily unavailable.

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Technical documents

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.