N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

RS Stock No.: 124-8762Brand: InfineonManufacturers Part No.: IRFP250MPBF
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

123 nC @ 10 V

Height

21.1mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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£ 1.43

Each (In a Tube of 25) (ex VAT)

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

£ 1.43

Each (In a Tube of 25) (ex VAT)

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
25 - 25£ 1.43£ 35.75
50 - 100£ 1.16£ 29.00
125 - 225£ 1.12£ 28.00
250 - 600£ 1.05£ 26.25
625+£ 0.99£ 24.75

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

123 nC @ 10 V

Height

21.1mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.