N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon IPW90R120C3FKSA1

RS Stock No.: 911-5038Brand: InfineonManufacturers Part No.: IPW90R120C3FKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

900 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

270 nC @ 10 V

Height

21.1mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon IPW90R120C3FKSA1

P.O.A.

N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon IPW90R120C3FKSA1
Stock information temporarily unavailable.

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

900 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

270 nC @ 10 V

Height

21.1mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.