Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 911-4785Brand: InfineonManufacturers Part No.: IGW40T120FKSA1
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Technical documents

Specifications

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

270 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 21.1 x 5.21mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Germany

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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£ 5.13

Each (In a Tube of 30) (ex VAT)

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

£ 5.13

Each (In a Tube of 30) (ex VAT)

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
30 - 30£ 5.13£ 153.90
60 - 120£ 4.95£ 148.50
150+£ 4.82£ 144.60

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Technical documents

Specifications

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

270 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 21.1 x 5.21mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Germany

Product details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.