N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2

RS Stock No.: 124-9035Brand: InfineonManufacturers Part No.: 2N7002H6327XTSA2
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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£ 0.04

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2

£ 0.04

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
3000 - 3000£ 0.04£ 120.00
6000 - 12000£ 0.04£ 120.00
15000+£ 0.04£ 120.00

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.